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| FDS6994S October 2006 FDS6994S Dual Notebook Power Supply N-Channel PowerTrench SyncFetTM General Description The FDS6994S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6994S contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. Features * Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode RDS(on) = 15 m @ VGS = 10V RDS(on) = 17.5 m @ VGS = 4.5V * Q1: Optimized for low switching losses Low gate charge (85.5 nC typical) RDS(on) = 21 m @ VGS = 10V RDS(on) = 26 m @ VGS = 4.5V 8.2A, 30V 6.9A, 30V D1 D1 D2 D2 S1 G1 6 7 5 Q1 4 3 2 Q2 SO-8 S2 8 1 G2 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage TA = 25C unless otherwise noted Parameter Q2 30 (Note 1a) Q1 30 16 6.9 20 2 1.6 1 0.9 -55 to +150 Units V V A W - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Drain Current 16 8.2 30 (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 C/W C/W Package Marking and Ordering Information Device Marking FDS6994S 2006 Fairchild Semiconductor Corporation Device FDS6994S Reel Size 13" Tape width 12mm Quantity 2500 units FDS6994S Rev C2(W) FDS6994S Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = 1 mA VGS = 0 V, ID = 250 uA ID = 1 mA, Referenced to 25C ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 0 V VGS = 16 V, VDS = 0 V Type Min Typ Max Units Q2 Q1 Q2 Q1 Q2 Q1 All 30 30 23 24 500 1 100 V mV/C A nA Off Characteristics On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) gFS On-State Drain Current Forward Transconductance VDS = VGS, ID = 1 mA VDS = VGS, ID = 250 A ID = 1 mA, Referenced to 25C ID = 250 uA, Referenced to 25C VGS = 10 V, ID = 8.2A VGS = 10 V, ID = 8.2 A, TJ = 125C VGS = 4.5 V, ID = 7.6 A VGS = 10 V, ID = 6.9 A VGS = 10 V, ID = 6.9 A, TJ = 125C VGS = 4.5 V, ID = 6.2 A VGS = 10 V, VDS = 5 V VDS = 10 V, ID = 8.2 A VDS = 10 V, ID = 6.9 A VDS = 15 V, VGS = 0 V, f = 1.0 MHz Q2 Q1 Q2 Q1 Q2 1 1 Q1 1.5 1.9 -2 -5 10 15 11 16 24 19 3 3 V mV/C 15 24 17.5 21 33.5 26 m Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 30 20 42 41 2815 800 540 205 210 90 2.844444.9 2.6 4.6 A S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS = 15 mV, f = 1.0 MHz pF pF pF FDS6994S Rev C2(W) Electrical Characteristics Symbol Parameter (continued) TA = 25C unless otherwise noted Test Conditions (Note 2) Type Min Typ Max Units Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 15 V, ID = 1 A, VGS = 10V, RGEN = 6 Q2: VDS = 15 V, ID = 7.9 A, VGS = 5 V Q1: VDS = 15 V, ID = 6.5 A, VGS = 5 V Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q2 11 11 8 7 50 27 17 4 25 8 6 3 7 3 20 20 16 14 80 43 31 8 35 12 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS tRR QRR tRR QRR VSD Maximum Continuous Drain-Source Diode Forward Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge IF = 8.2 A, diF/dt = 300 A/s IF = 6.9 A, diF/dt = 100 A/s 2.3 1.3 25 19 23 10 0.4 0.53 7 1.2 A ns nC ns nC V (Note 3) (Note 3) (Note 2) (Note 2) Drain-Source Diode Forward VGS = 0 V, IS = 2.3 A Voltage VGS = 0 V, IS = 1.3 A Q2 Q1 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78C/W when mounted on a 2 0.5in pad of 2 oz copper b) 125C/W when mounted on a 2 0.02 in pad of 2 oz copper c) 135C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. See "SyncFET Schottky body diode characteristics" below. FDS6994S Rev C2(W) FDS6994S Typical Characteristics for Q2 30 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 3.5V 3.0V 2.5V ID, DRAIN CURRENT (A) 4.5V 20 1.4 VGS = 3.0V 1.2 3.5V 4.0V 4.5V 6.0V 10 1 10V 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 0.8 0 10 20 30 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.035 RDS(ON), ON-RESISTANCE (OHM) 1.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 8.2A VGS = 10V 1.2 ID = 4.1A 0.03 0.025 0.02 0.015 0.01 0.005 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) TA = 25oC 1 TA = 125oC 0.8 0.6 -50 -25 0 25 50 75 o 100 125 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 30 25 ID, DRAIN CURRENT (A) 20 15 TA = 125oC 10 5 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 25oC IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 VDS = 5V VGS = 0V 1 TA = 125oC 25oC 0.1 -55oC 0.01 -55oC 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6994S Rev C2(W) FDS6994S Typical Characteristics for Q2 10 VGS, GATE-SOURCE VOLTAGE (V) ID =8.2A 8 20V 6 VDS = 10V 15V 4000 f = 1MHz VGS = 0 V CAPACITANCE (pF) 3000 Ciss 2000 4 1000 Crss 2 Coss 0 0 10 20 30 40 50 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 RDS(ON) LIMIT 100s P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics. 50 ID, DRAIN CURRENT (A) 10 1ms 10ms 100ms 1s 10s DC VGS = 10V SINGLE PULSE RJA = 135oC/W TA = 25oC 40 SINGLE PULSE RJA = 135C/W TA = 25C 30 1 20 0.1 10 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RJA(t) = r(t) * RJA RJA = 135 C/W P(pk) t1 t2 SINGLE PULSE 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6994S Rev C2(W) FDS6994S Typical Characteristics for Q1 20 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V ID, DRAIN CURRENT (A) 15 3.5V 2.2 2 1.8 VGS = 3.5V 1.6 1.4 1.2 1 0.8 0 0.5 1 1.5 2 0 5 10 ID, DRAIN CURRENT (A) 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 4.0V 4.5V 6.0V 10V 5 3.0V 0 Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 0.075 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 6.9A VGS = 10V ID = 3.5A 1.4 0.05 TA = 125oC 1.2 1 0.025 0.8 TA = 25oC 0 2 4 6 8 10 0.6 -50 -25 0 25 50 75 o 100 125 150 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 13. On-Resistance Variation with Temperature. 20 VDS = 5V ID, DRAIN CURRENT (A) 15 25oC 10 TA = 125oC 5 -55oC IS, REVERSE DRAIN CURRENT (A) Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V 10 1 0.1 -55C 0.01 0.001 0.0001 TA = 125oC 25oC 0 1.5 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6994S Rev C2(W) FDS6994S Typical Characteristics Q1 5 VGS, GATE-SOURCE VOLTAGE (V) ID = 6.9A 4 VDS = 10V 15V 1200 1000 f = 1 MHz VGS = 0 V 20V 3 CAPACITANCE (pF) 800 Ciss 600 400 200 2 Coss 1 0 0 2 4 6 8 10 Qg, GATE CHARGE (nC) Crss 0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 17. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 50 Figure 18. Capacitance Characteristics. ID, DRAIN CURRENT (A) 100s 10 RDS(ON) LIMIT 1ms 10ms 100ms 1s 10s VGS = 10V SINGLE PULSE RJA = 135oC/W TA = 25oC 0.01 0.01 DC 40 SINGLE PULSE RJA = 135C/W TA = 25C 30 1 20 0.1 10 0.1 1 10 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 135oC/W P(pk) t1 t2 SINGLE PULSE 0.1 0.1 0.05 0.02 0.01 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6994S Rev C2(W) FDS6994S Typical Characteristics (continued) This section copied from FDS6984S datasheet SyncFET Schottky Body Diode Characteristics Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 22 shows the reverse recovery characteristic of the FDS6994S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. IDSS, REVERSE LEAKAGE CURRENT (A) 0.1 125oC 0.01 0.001 3A/DIV 0.0001 25 C o 0.00001 0 10 20 30 VDS, REVERSE VOLTAGE (V) 10nS/DIV Figure 24. SyncFET body diode reverse leakage versus drain-source voltage and temperature. Figure 22. FDS6994S SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 23 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6690A). 3A/DIV 0V 10nS/DIV Figure 23. Non-SyncFET (FDS6690A) body diode reverse recovery characteristic. FDS6994S Rev C2(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Rev. I20 |
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